Surface Characterization of Silicon Wafers Polished by Three Different Methods

Guang Qiu Hu; Jing Lu; Jian Yun Shen; Xi Peng Xu

doi:10.4028/www.scientific.net/KEM.487.233

Paper Titles

Recovery of Electroplated Diamond Tool with Thermal Shock Method
p.215

Self-Sharpening Abrasive Composite Bulks with PCBN Grains
p.220

Research on the Milling Toughness of Black Silicon Carbide and the Repeatability of the Testing Results
p.225

Performance of Monolayer Brazed CBN Wheels Manufactured with Rare Earth Lanthanum Modified Ag-Cu-Ti Filler
p.229

Surface Characterization of Silicon Wafers Polished by Three Different Methods
p.233

Study on Compound Machining of Polyurethane Polishing Pad and Cluster Abrasive Brush Based on MR Effect
p.238

Study on Lubricating Behavior in Chemical Mechanical Polishing
p.243

Processing of Lapping Track in Dual Rotated Plates Eccentric Lapping Mode
p.248

Research on Subsurface Damage After Abrasives and Fixed-Abrasive Lapping of K9 Glass
p.253

HomeKey Engineering MaterialsKey Engineering Materials Vol. 487Surface Characterization of Silicon Wafers...

Surface Characterization of Silicon Wafers Polished by Three Different Methods

Abstract:

The surface roughness and surface morphology of silicon wafers polished by three different polishing methods were analyzed in this paper. A polishing pad was prepared by means of sol-gel technology as semi-fixed abrasive tool. An electroplated polishing pad was chosen as fixed abrasive tool. And a polishing cloth was chosen as free abrasive tool. The results showed that the surface of silicon wafer polished by the sol-gel polishing pad was superior to the other two. It was easy to get mirror effect with few scratches while the free abrasive and fixed abrasive got lots of scratches on 23silicon wafers. The surface roughness of silicon wafer polished by the sol-gel polishing pad reached 1.41nm measured by atomic force microscope (AFM).