Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field

X.A. Mei; M. Chen; R. F. Liu; Y.H. Sun; J. Liu

doi:10.4028/www.scientific.net/KEM.492.234

Paper Titles

Preparation and Characterization of Textured CaBi_4-XLa_XTi₄O₁₅ Ceramics
p.218

Electrical Characterization and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Thin Films
p.222

Ferroelectric Properties and Microstructures of Dy₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.226

Ferroelectric Properties of Bismuth Titanate Ceramics by Eu³⁺/V⁵⁺ Substitution
p.230

Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field
p.234

Electrical Behaviors of Bi₂WTi₃O₁₂ Ceramics
p.238

Measurements of Thermoelectric Behavior and Microstructure of Carbon Nanotubes/Carbon Fiber-Cement Based Composite
p.242

Synthesis of ZnO/MWCNT Heterostructure via the Self-Assemble Route and its Property
p.246

Grain Growth in (Ga, Mn)-Codoped ZnO Ceramics
p.250

HomeKey Engineering MaterialsKey Engineering Materials Vol. 492Negative Resistance Behavior of Ferroelectric...

Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field

Abstract:

Ferroelectric Bi₄Ti₃O₁₂ ceramics are fabricated by conventional solid-state reaction process. The current-voltage characteristic of Bi₄Ti₃O₁₂ sample exhibits a voltage-controlled negative differential resistance behavior at low field (E≤100V/mm), and an obvious PTC effect appears at around 100°C on the resistance-temperature curve. Based on conducting filament model about electrical transport, instead of Heywang-Jonker model, the experimental results of Bi₄Ti₃O₁₂ ceramics are suitably explained.

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Key Engineering Materials (Volume 492)

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234-237

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https://doi.org/10.4028/www.scientific.net/KEM.492.234

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September 2011

Authors:

X.A. Mei, M. Chen, R. F. Liu, Y.H. Sun, J. Liu

Keywords:

Dielectric, Ferroelectric, Microstructure

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