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Paper Titles
Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films
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Ferroelectric Properties and Microstructures of Dy2O3-Doped Bi4Ti3O12 Ceramics
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Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field
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Electrical Behaviors of Bi2WTi3O12 Ceramics
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Electrical Behaviors of Bi2WTi3O12 Ceramics

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Abstract:

Bi2WTi3O12 ceramics are fabricated by conventional solid-state reaction process. XRD analysis reveals that Bi2WO6 is the main phase and Bi4Ti3O12 is the second phase. With increasing temperature the sample first appears metallic behavior, then strong electrical fluctuations above 100°C, and finally exhibits stable nonlinear properties characterized by semiconductivity above 300°C at low field (E ≤ 100V/mm). The Arrhenius law for electrical conductivity by thermal activation is not suitable to explain the anomalous results. Based on the phase transition of tungsten trioxide from room temperature to about 300°C, the electrical properties of Bi2WTi3O12 ceramics can be explained.

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Periodical:

Key Engineering Materials (Volume 492)

Pages:

238-241

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.492.238

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Online since:

September 2011

Authors:

Chong Qing Huang, M. Chen, X.A. Mei, Y.H. Sun, J. Liu

Keywords:

Dielectric, Ferroelectric, Microstructure

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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