Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films

Abstract:

Article Preview

Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.

Info:

Periodical:

Edited by:

Yiwang Bao, Danyu Jiang, Li Tian and Jianghong Gong

Pages:

222-225

DOI:

10.4028/www.scientific.net/KEM.492.222

Citation:

J. Liu et al., "Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vol. 492, pp. 222-225, 2012

Online since:

September 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.