Electrical Characterization and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Tb-doped bismuth titanate (Bi_4-xCe_xTi₃O₁₂: BCT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (T_C) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The P_r and the E_c values of the BCT film with x = 0.75 were 23 μC/cm² and 80 kV/cm, respectively.

• Periodical: Key Engineering Materials (Volume 492)
• Pages: 222-225
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.492.222
• Online since: September 2011
• Authors: J. Liu, M. Chen, X.A. Mei, Y.H. Sun, Chong Qing Huang
• Keywords: Dielectric, Ferroelectric, Microstructure

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