Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films
Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.
Yiwang Bao, Danyu Jiang, Li Tian and Jianghong Gong
J. Liu et al., "Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vol. 492, pp. 222-225, 2012