Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films

Abstract:

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Dy2O3-doped bismuth titanate (Bi4-xDyxTi3O12: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (Pr) and coercive field (Ec) of the BDT Film with x = 0.8 were 20 μC/cm2 and 60 KV/cm, respectively. After 3 × 1010 switching cycles, 20% degradation of Pr is observed in the film.

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Periodical:

Edited by:

Yiwang Bao, Danyu Jiang, Li Tian and Jianghong Gong

Pages:

206-209

DOI:

10.4028/www.scientific.net/KEM.492.206

Citation:

M. Chen et al., "Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vol. 492, pp. 206-209, 2012

Online since:

September 2011

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$35.00

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