Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films

Min Chen; X.A. Mei; A.H. Cai; J. Liu; Chong Qing Huang

doi:10.4028/www.scientific.net/KEM.492.206

Paper Titles

Preparation and Characterization of Lead-Free Piezoelectric Ceramics
p.189

Dielectric and Piezoelectric Properties of Lead Free (1-x-y)Na_1/2Bi_1/2TiO₃-xBaTiO₃-yBiFeO₃ Piezoelectric Ceramics
p.194

Preparation and Characterization of Lead-Free Na_0.54K_0.42Li_0.04NbO₃ Nano-Powders by Sol-Gel Method
p.198

Preparation and Characterization of BiFeO₃Film via Sol-Gel Spin-Coating Process
p.202

Electrical Characteristics and Microstructures of Dy₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.206

Electrical Characteristics and Microstructures of Eu₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.210

Ferroelectric Properties of Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂
p.214

Preparation and Characterization of Textured CaBi_4-XLa_XTi₄O₁₅ Ceramics
p.218

Electrical Characterization and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Thin Films
p.222

HomeKey Engineering MaterialsKey Engineering Materials Vol. 492Electrical Characteristics and Microstructures of...

Electrical Characteristics and Microstructures of Dy₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Dy₂O₃-doped bismuth titanate (Bi_4-xDy_xTi₃O₁₂: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (P_r) and coercive field (E_c) of the BDT Film with x = 0.8 were 20 μC/cm² and 60 KV/cm, respectively. After 3 × 10¹⁰ switching cycles, 20% degradation of P_r is observed in the film.