Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12
Bi3.25Gd0.75Ti2.97V0.03O12 (BGTV)ceramic were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BGTV caused a large shift of the Curie temperature ( TC ) of Bi4Ti3O12 (BIT) from 675°C to 398°C. The remanent polarization and the coercive field of the BGTV were 30μC/cm2 and 52kV/cm at an electric field of 87kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 0.003 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi4Ti3O12 (~20μC/cm2 and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12 (~12μC/cm2 and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9 system.
Yiwang Bao, Danyu Jiang, Li Tian and Jianghong Gong
C. Q. Huang et al., "Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12", Key Engineering Materials, Vol. 492, pp. 214-217, 2012