PVD of N-CuIn3Se5 Photoabsorber Films

N. Adhikari; S. Bereznev; J. Kois; O. Volobujeva; Taavi Raadik; R. Traksmaa; A. Tverjanovich; A. Öpik

doi:10.4028/www.scientific.net/KEM.495.339

Paper Titles

CO Sensing Properties of La1-xCaxFeO3 Perovskite Nanocrystalline Materials
p.323

Gas Sensing Properties of Nanocrystalline Nd1-xCaxFeO₃
p.327

Recognition and Electrochemical Sensing of 8-Hydroxydeoxyguanosine with Molecularly Imprinted Poly (ethylene-co-vinyl alcohol) Thin Films
p.331

High-Temperature Sensor Based on Neutron-Irradiated 6H-SiC
p.335

PVD of N-CuIn3Se5 Photoabsorber Films
p.339

Fabrication of Porous Layer on the Nondoped Amorphous SiC Thin Film by Anodic Etching Method in HF/H₂O/H₂O₂
p.343

Effect of Coordination of Molecules on the Properties of Water as Solvent
p.347

Temperature Response of Magnetostrictive/Piezoelectric Polymer Magnetoelectric Laminates
p.351

Sensing Element Made of Multi-Wall Carbon Nanotube Network for Organic Vapor Detection
p.355

HomeKey Engineering MaterialsKey Engineering Materials Vol. 495PVD of N-CuIn3Se5 Photoabsorber Films

PVD of N-CuIn3Se5 Photoabsorber Films

Abstract:

Thin films of Cu-In-Se (CISe) photoabsorber with overall composition of CuIn3Se5 were deposited onto glass/ITO substrates by using physical vapour deposition (PVD) technique. Thermal conditions for the substrates during deposition process and following thermal annealing were selected with the purpose to prepare polycrystalline n-CuIn3Se5 photoabsorber layers for the hybrid photovoltaic structures based on inorganic photoabsorber and conductive polymer functional layers. It was found, that the CISe layers deposited at the temperature of substrate of 200 °C and annealed at the temperature range of 450-500 oC in vacuum and double annealed in argon and vacuum at 500 oC demonstrate high photosensitivity and photoconductivity under white light illumination of 100 mW/cm2 intensity. Obtained results show the chalcopyrite structure of prepared photoabsorber films with good adhesion to the glass/ITO substrate.

You might also be interested in these eBooks

Materials and Applications for Sensors and Transducers

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 495)

Pages:

339-342

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.495.339

Citation:

Cite this paper

Online since:

November 2011

Authors:

N. Adhikari, S. Bereznev, J. Kois, O. Volobujeva, Taavi Raadik, R. Traksmaa, A. Tverjanovich, A. Öpik

Keywords:

Annealing, CuIn3Se5, Photoabsorber, PVD

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Sterner, Th.W. Matthes, J. Kessler Et al, 16th European photovoltaics solar energy conference, 2000 May, pp.771-775.

Google Scholar

[2] L. Djellal, A. Bouguelia, M. Trari, Semicond. Sci. Technol 23 (2008) 045019.

Google Scholar

[3] S. Bereznev, J. Kois, I. Golovtsov, A. Öpik, E. Mellikov, Thin Solid Films 511-512 (2006), pp.425-429.

DOI: 10.1016/j.tsf.2005.11.074

Google Scholar

[4] P. Malar, S. Kasiviswanathan , Solar engineering materials and solar cells 85 (2005), pp.521-533.

Google Scholar

[5] H.P. wang, I. shih and C.H. Champness, Thin solid films 494 (2000), p.361.

Google Scholar

[6] Chuan-Ming Xu, Xiao-Liang Xu, Jun Xu, Xiao-Jie Yang, Jian Zuo, Ning Kong, Wen- Hao Huang and Hong-Tu Liu, Semicond. Sci. Technol. 1201 (2004), p.19.

Google Scholar