Fabrication of Porous Layer on the Nondoped Amorphous SiC Thin Film by Anodic Etching Method in HF/H₂O/H₂O₂

Abstract:

Due to the inertness of the intrinsic (nondoped) amorphous SiC (i-aSiC) material to the chemical impact, for making it porous by the electrochemical etching method, one must use the electrolyte solution with an appropriate composition. For this purpose we have found that besides the use of solutions containing surface activation agent (Triton X-100 for example), one can use also solutions containing oxidation agent. In this report we present the results obtained with electrolyte solution in which H₂O₂ plays the role of oxidation agent. Results showed that with appropriate ratio of components in the HF/H₂O/H₂O₂ solution, we can manufacture a porous layer in the i-aSiC thin film with the porosity similar to the porosity of the porous layer obtained by etching in the HF/H₂O/Triton X-100 solution with optimal composition. Thin film of i-aSiC material with porous surface layer can be used in different types of sensors.

• Periodical: Key Engineering Materials (Volume 495)
• Pages: 343-346
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.495.343
• Online since: November 2011
• Authors: D. T. Cao, C. Tuan-Anh, L. T. Quynh-Ngan, N. H. Anh, Pham Thu Nga
• Keywords: Electrochemical Etching, Porous Amorphous SiC, Thin Film

References

[1] L.T. Canham: Appl. Phys. Lett. Vol. 57 (1990), p.1046.

[2] E.J. Connolly, H.T.M. Pham, J. Groeneweg, P.M. Sarro, and P.J. French: Sens. Actuators Vol. B 100 (2004) , p.216.

[3] E.J. Connolly, B. Timmer, H.T.M. Pham, J. Groeneweg, P.M. Sarro, W. Olthuis and P.J. French: Sens. Actuators Vol. B 109 (2005), p.44.

DOI: 10.1016/j.snb.2005.03.067

[4] V.P. Parkhutik, F. Namavar, and E. Andrade: Thin Solid Films Vol. 297 (1997), p.229.

DOI: 10.1016/s0040-6090(96)09422-9

[5] Dao Tran Cao, Nguyen Thi Thu Ha, Huynh Thi Ha, Bui Huy, Vu Thi Thanh, Cao Tuan Anh, Pham Thi Mai Hoa and P. M. Sarro: Advances in Natural Sciences, Vol. 10 (2009), p.19.

DOI: 10.1002/mrc.5238/v3/response1

[6] Dao Tran Cao, Cao Tuan Anh, Nguyen Thi Thu Ha, Huynh Thi Ha, Bui Huy, Pham Thi Mai Hoa, Pham Hong Duong, Nguyen Thi Thanh Ngan and Ngo Xuan Dai: J. Phys. Conf. Series Vol. 187 (2009), Article No. 012023.

DOI: 10.1080/00207411.2020.1816114

[7] VW. Shin, W. Seo, O. Takai and K. Koumoto: J. Electron. Mater. Vol. 27 (1998), p.304.

[8] J.S. Shor, X.G. Zhang and R.M. Osgood: J. Electrochem. Soc. Vol. 139 (1992), p.1213.

[9] M.W. Shin and J.G. Song, Mater. Sci. Eng. Vol. B 95 (2002), p.191.