Fabrication of Porous Layer on the Nondoped Amorphous SiC Thin Film by Anodic Etching Method in HF/H2O/H2O2
Due to the inertness of the intrinsic (nondoped) amorphous SiC (i-aSiC) material to the chemical impact, for making it porous by the electrochemical etching method, one must use the electrolyte solution with an appropriate composition. For this purpose we have found that besides the use of solutions containing surface activation agent (Triton X-100 for example), one can use also solutions containing oxidation agent. In this report we present the results obtained with electrolyte solution in which H2O2 plays the role of oxidation agent. Results showed that with appropriate ratio of components in the HF/H2O/H2O2 solution, we can manufacture a porous layer in the i-aSiC thin film with the porosity similar to the porosity of the porous layer obtained by etching in the HF/H2O/Triton X-100 solution with optimal composition. Thin film of i-aSiC material with porous surface layer can be used in different types of sensors.
E. Hristoforou and D.S. Vlachos
D. T. Cao et al., "Fabrication of Porous Layer on the Nondoped Amorphous SiC Thin Film by Anodic Etching Method in HF/H2O/H2O2", Key Engineering Materials, Vol. 495, pp. 343-346, 2012