Dislocation Dynamics in Bending Deformation of Si

Ichiro Yonenaga; Kazuo Nakajima

doi:10.4028/www.scientific.net/KEM.508.357

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Dislocation Dynamics in Bending Deformation of Si

Dislocation Dynamics in Bending Deformation of Si

Abstract:

Deformation Characteristics in High-Purity Si Crystals Subjected to Bending Tests Were Studied. Specimens Were Deformed at the Temperatures Higher than 800°C without Brittle Fracture under Application of a High Stress up to 350 Mpa. Stress-Strain Behavior and the Yield Stresses Depend on the Temperature and the Strain Rate. The Results Were Discussed in Terms of the Dislocation Dynamics and Dislocation Mobility to Provide Fundamental Knowledge for Wafer Manufacturing.

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Periodical:

Key Engineering Materials (Volume 508)

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357-360

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.357

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Online since:

March 2012

Authors:

Ichiro Yonenaga, Kazuo Nakajima

Keywords:

Bending Deformation, Dislocation Dynamics, Dislocation Velocity, Silicon

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References

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