Microwave Properties in BaO-TiO2 System Added by ZrO2 and WO3

Xin Ye Yang; Xiao Hui Wang; An Ji; Long Tu Li

doi:10.4028/www.scientific.net/KEM.512-515.1155

Paper Titles

Preparation of Nano BaTiO₃-Based Dielectric Ceramics by Different Sintering Methods
p.1136

The Preparation of Flexible Substrate Using BaTiO₃/Polymer Composites for Application in High Frequency Devices
p.1142

Effect of Bi₂O₃-B₂O₃-CuO Additives on Dielectric Properties and Energy Storage of BaTiO₃ Ceramics
p.1146

Antimony Doping Effect on Barium Strontium Titanate
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Microwave Properties in BaO-TiO₂ System Added by ZrO₂ and WO₃
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Synthesis and Characterization of BaTiO₃-(Bi_0.5Na_0.5)TiO₃ Solid Solution Based Dielectric Ceramics
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On Preparation of SrTiO₃ Thin Films with Self-Assembled Monolayers by Liquid Phase Deposition and its Dielectric Properties
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Effect of Annealing Treatments on the Physical Characteristics of (Ca_0.8Sr_0.2)TiO₃ Thin Films by Sol-Gel Method
p.1171

Synthesis of Bismuth Titanate Thin Films by Liquid-Phase Self-Assembled Monolayers
p.1175

HomeKey Engineering MaterialsKey Engineering Materials Vols. 512-515Microwave Properties in BaO-TiO2 System Added by...

Microwave Properties in BaO-TiO₂ System Added by ZrO₂ and WO₃

Abstract:

Both BaTi₄O₉ and Ba₂Ti₉O₂₀ have the best microwave properties among many compounds in BaO-TiO₂ system. The microwave performance of the ceramics in BaO-TiO₂ system, which were prepared by conventional solid state method, was investigated in this paper. The study indicates that the (Ti,Zr)/Ba ratio has a great effect on the dielectric properties of the ceramic due to different BaTi₄O₉/Ba₂Ti₉O₂₀ ratio. The pure BaTi₄O₉ ceramic exhibits the most outstanding microwave properties, with ε_r=35.55 and Q×f=43300GHz. On the contrary, the dielectric property of the pure Ba₂Ti₉O₂₀ ceramic was not good enough, which should be doped with some additive additions. WO₃ was incorporated into the system and the sintering temperature was adjusted to improve the microwave dielectric property. The Q×f was increased to 38000GHz by adding 1.35mol% WO₃ due to the formation of a little BaWO₄ phase. When sintered at a higher temperature (1380°C), the BaO-TiO₂ system ceramic has ε_r =37.04 and Q×f =44874GHz.

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Key Engineering Materials (Volumes 512-515)

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1155-1159

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.512-515.1155

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Online since:

June 2012

Authors:

Xin Ye Yang, Xiao Hui Wang, An Ji, Long Tu Li

Keywords:

Ba₂Ti₉O₂₀, BaTi₄O₉, Microwave Dielectric Properties

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