Thermoelectric Properties of a Wide–Gap Chalcopyrite Compound AgInSe2

P.Z. Ying; H. Zhou; Y.L. Gao; Y.Y. Li; Y.P. Li; X.L. Lian; J.L. Cui

doi:10.4028/www.scientific.net/KEM.519.188

Paper Titles

Theoretical Study of the Filling Fraction Limit of Fe-Substituted Ba-Filled Skutterudite Ba_yFe_4xCo_4-4xSb₁₂
p.169

Electronic Structure and Half-Metallic Properties of Cubic Perovskite BaRu_1-XTi_xO₃ System
p.174

Improvement in the Thermoelectric Properties by Ag/Sb Co-Substitution in PbSe
p.179

Laser Induced Thermoelectric Voltage Effect of LaNiO₃/LaAlO₃ Multilayer
p.184

Thermoelectric Properties of a Wide–Gap Chalcopyrite Compound AgInSe₂
p.188

Reaction Kinetic in the CVD Process of Pyrocarbon Deposition from Propylene Pyrolysis
p.193

Synthesis and Characterization of Manganese Oxide/CNTs Composites as Electrochemical Capacitor Electrode Materials
p.197

Preparation of r-GO/Carbon Sphere/PANI Composites with a High Supercapacity
p.201

Preparation of Graphene-Like Carbon Materials as Electrodes of Electric Double Layer Capacitors
p.206

HomeKey Engineering MaterialsKey Engineering Materials Vol. 519Thermoelectric Properties of a Wide–Gap...

Thermoelectric Properties of a Wide–Gap Chalcopyrite Compound AgInSe₂

Abstract:

Here we report the thermoelectric properties of a wide–gap chalcopyrite compound AgInSe₂, and observed the remarkable improvement in electrical conductivity σ, due to the bandgap (E_g = 1.12 eV) reduction compared to In₂Se₃. The improvement in σ is directly responsible for the enhancement of thermoelectric figure of merit ZT, though the thermal conductivity is much higher at 500 ~ 724 K. The maximum ZT value is 0.34 at 724 K, increasing by a factor of 4, indicating that this chalcopyrite compound is of a potential thermoelectric candidate if further optimizations of chemical compositions and structure are made.