Micro Cutting of Sapphire

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Abstract:

Sapphire has high mechanical strength at high temperatures and high pressure. Thus, micro devices made of sapphire are expected to be used in extreme environments such as aerospace, defense and marine. Then, the machining technology is required for manufacturing of 3 dimensional shapes. The paper discusses the micro cutting process of sapphire to determine the applicable cutting parameters in planing and milling. First, the critical stress at which crack initiation occurs is measured in the indentation test with detecting AE signal. The critical stress of sapphire is beyond 22.6 GPa, which is much higher than those of glasses. Then, the critical depths of cut, maximum depths of cut in which crack-free surfaces were finished, were measured in cutting of r crystal plane. The critical depth of cut is maximized when the cutting is performed in a crystal axis direction. In milling of sapphire, adhesion of chip onto the surface finish should be considered as well as brittle fracture. In milling of r crystal plane, the surface finish is improved better than those of the other crystal planes. Adhesion of material can also be controlled by supplying lubrication.

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Periodical:

Key Engineering Materials (Volumes 523-524)

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99-104

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Online since:

November 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] D.A. Gregory, K.A. Herren, Ion milling of sapphire, J. Electrochemical Society, 152, 9 (2005) J117-J119.

DOI: 10.1149/1.1979208

Google Scholar

[2] T. Dai, X. Kang, B. Zhang, Staudy and formation of 2D microstructure of sapphire by focused ion beam milling, Microelectronic Engineering, 85, 3 (2008) 640-645.

DOI: 10.1016/j.mee.2007.11.009

Google Scholar

[3] D. Ashkenasi, A. Rosenfeld, H. Varel, M. Wähmer, E.E.B. Campbell, Laser processing of sapphire with picosecond and sub-picosecond pulses, Applied Surface Science, 120, 1-2 (1997) 65-80.

DOI: 10.1016/s0169-4332(97)00218-3

Google Scholar

[4] J. Wang, L. W. Guo, H. Q. Jia, Y. Wang, Z. G. Xing, W. Li, H. Chen, J. M. Zhou, Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN, J. Electrochemical Society, 153, 3 (2006) C182-C185.

DOI: 10.1149/1.2163813

Google Scholar

[5] T. Matsumura, T. Ono, Cutting process of glass with inclined ball end mills, J. Material Processing Technology, 200 (2008) 356-363.

DOI: 10.1016/j.jmatprotec.2007.08.067

Google Scholar

[6] T. Matsumura, Modeling of cutting process with cutter axis inclination, Advanced Materials Research, 223 (2011) 66-74.

DOI: 10.4028/www.scientific.net/amr.223.66

Google Scholar