Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

Chun Ya Li; Xi Feng Li; Long Long Chen; Ji Feng Shi; Jian Hua Zhang

doi:10.4028/www.scientific.net/KEM.537.12

Paper Titles

Preface

Factors Affecting the Fracture Strength of Freestanding Diamond Films
p.1

Tribological Performance of Ceramic Composite Coatings Obtained through Microarc Oxidation on Ly12 Aluminum Alloy
p.7

Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD
p.12

Study on Inorganic Coating of Porous Nitride Radome
p.16

Study on Hole-Sealing Coating of Porous Silicon Nitride Surface
p.20

The Effect of SiC Coating on the Joint of C/C and LAS
p.24

Crack Formation and Distribution of SiC Coating Prepared by CVD on Carbon/Carbon Composites
p.28

A C/SiC Graded Coating on C/C Composites by LPCVD in the Methyltrichlorosilane/Hydrogen System
p.32

HomeKey Engineering MaterialsKey Engineering Materials Vol. 537Effects of Substrate Temperature on the Properties...

Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

Abstract:

Under different growth conditions, silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The surface morphologies of the thin films were investigated using atomic force microscope (AFM). The average transmittance in the visible region was over 90%.

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Periodical:

Key Engineering Materials (Volume 537)

Pages:

12-15

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.537.12

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Online since:

January 2013

Authors:

Chun Ya Li, Xi Feng Li, Long Long Chen, Ji Feng Shi, Jian Hua Zhang

Keywords:

PECVD, Silicon Nitride Films

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