Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

Ji Chao Wang; Guang Ming Wu; Guo Hua Gao; Xiao Wei Zhou

doi:10.4028/www.scientific.net/KEM.537.174

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Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 537Characterization and Electrochemical Performances...

Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

Abstract:

Vanadium oxide films were prepared via the sol–gel process and dip coating method, using V₂O₅ as raw materials and H₂O₂ (volume fraction 30) as the solvent. Mn and Ni ions were added to vanadium oxide sol to prepare doping vanadium oxide films. The films were characterized by atomic force microscopy, FT-IR, X-ray diffraction and electrochemical techniques. The add-on of Metal ions will not affect the morphology of the vanadium oxide films, but change the valence of vanadium ion and vanadium oxide crystal phase. Furthermore, cyclic voltammetry curves show that metal ions doping vanadium oxide films exhibit reversible electrochemical reaction. But electrochemical impedance spectroscopy indicates pure vanadium oxide film has a better diffusion rate.

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Key Engineering Materials (Volume 537)

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174-178

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https://doi.org/10.4028/www.scientific.net/KEM.537.174

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January 2013

Authors:

Ji Chao Wang, Guang Ming Wu, Guo Hua Gao, Xiao Wei Zhou

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Diffusion Rate, Doping, Sol-Gel Process, Vanadium Oxide Film

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