Improvement of n/i Interface Layer Properties in Microcrystalline Silicon Solar Cell

Abstract:

Properties of n-i interface are critical for hydrogenated microcrystalline silicon (μc-Si:H )substrate-type (n–i–p) solar cell as it affects carrier collection, which is visible in the red response . Here, we report a remarkable improvement in visible-infrared responses upon hydrogen plasma treatment （HPT）of n/i interface. We demonstrate that hydrogen plasma treatment in the initial stage of a μc-Si:H i layer growth affects the red response of μc-Si:H solar cell. At the optimal deposition condition, 18% higher short-circuit current density was obtained than its count part without using HPT

• Periodical: Key Engineering Materials (Volume 537)
• Pages: 193-196
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.537.193
• Online since: January 2013
• Authors: Xiang Bo Zeng, Jin Yan Li, Xiao Bing Xie, Ping Yang, Hao Li, Hai Bo Xiao, Xiao Dong Zhang, Qi Ming Wang
• Keywords: Hydrogen Plasma Treatment, Microcrystalline Silicon, Solar Cell

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