The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Abstract:

Under different growth conditions, microcrystalline silicon thin films are deposited successfully on glass substrates by the double-frequency plasma enhanced chemical vapor deposition (PECVD). We report the systematic investigation of the effect of process parameters (hydrogen dilution, substrate temperature, forward power, reaction pressure, et al.) on the growth characteristics of microcrystalline silicon thin films. Raman scattering spectra are used to analyze the crystalline condition of the films and the experimental results. Optimizing the process parameters, the highest crystalline volume fraction of microcrystalline silicon films was achieved. It is found that the crystalline volume fraction of microcrystalline silicon films reaches 72.2% at the reaction pressure of 450 Pa, H2/SiH4 flow ratio of 800sccm/10sccm, power of 400 W and substrate temperature of 350 °C.

• Periodical: Key Engineering Materials (Volume 537)
• Pages: 197-200
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.537.197
• Online since: January 2013
• Authors: Chun Ya Li, Hao Zhang, Jun Li, Xi Feng Li, Jian Hua Zhang
• Keywords: Microcrystalline Silicon Thin Film, PECVD

References

[1] R.A. Street, Thin-Film Transistors, Adv. Mater. 21 (2009) 2007–(2022)

[2] D. Knipp, R.A. Street, H. Stiebig, et al., Vertically Integrated Amorphous Silicon Color Sensor Arrays, IEEE Trans.Electron. 53 (2006) 1551-1558.

DOI: 10.1109/ted.2006.875822

[3] Y. Mai, S. Klein, R. Carius, et al., Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers, Appl. Phys. Lett. 87 (2005) 1-3.

DOI: 10.1063/1.2011771

[4] S. Klein, F. Finger, R. Carius, et al., Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells, Thin Solid Films. 430 (2003) 202-207.

DOI: 10.1016/s0040-6090(03)00111-1

[5] H. Jia, H. Shirai, In Situ Study On the Growth of Microcrystalline Silicon Film Using the High-Density Microwave Plasma for Si Thin Film Solar Cells, Thin Solid Films. 506 (2006) 27-32.

DOI: 10.1016/j.tsf.2005.08.030

[6] Y. Sakuma, L. Haiping, H. Ueyama, et al., High-Density Microwave Plasma for High-Rate and Low-Temperature Deposition of Silicon Thin Film, Vacuum 59 (2000) 266-276.

DOI: 10.1016/s0042-207x(00)00279-7

[7] L.H. Guo, R.M. Lin, Studies on the formation of microcrystalline silicon with PECVD under low and high working pressure, Thin Solid Films. 376 (2000) 249-254.

DOI: 10.1016/s0040-6090(00)01210-4

[8] P.Roca i Cabarrocas, R.Brenot, P.Bulkin, et al., Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique, J. Appl. Phys. 86 (1999) 7079-7082.

DOI: 10.1063/1.371795

[9] E.Amanatides, D. Mataras and D.E. Rapakoulias, Deposition rate optimization in SiH4/H2 PECVD of hydrogenated microcrystalline silicon, Thin Solid Films. 383 (2001) 15-18.

DOI: 10.1016/s0040-6090(00)01603-5

[10] R.Platz and S.Wagner, Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane, Appl. Phys. Lett. 73 (1998) 1236-1238.

DOI: 10.1063/1.122138

[11] J. K. Rath, R. H. Franken, A. Gordijn, and R. E. Schropp, et al., Growth mechanism of microcrystalline silicon at high pressure conditions, J. Non Cryst. Solids. 338 (2004) 56-60.

DOI: 10.1016/j.jnoncrysol.2004.02.021

[12] V. G. Golubev, V. Y. Davydov, A. V. Medvedev, and A. B. Pevtsov, et al., Raman scattering spectra and electrical conductivity of thin silicon films with a mixed amorphous-nanocrystalline phase composition: determination of the nanocrystalline volume fraction, Phys. Solid State. 39 (1997) 1197-1201.

DOI: 10.1134/1.1130042