Development of Porous Silicon Based Visible Light Photodetectors

Abstract:

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

• Periodical: Key Engineering Materials (Volume 538)
• Pages: 341-344
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.538.341
• Online since: January 2013
• Authors: Yuan Ming Huang, Qing Lan Ma, Bao Gai Zhai
• Keywords: Nanocrystal, Nanostructure, Photoluminescence (PL), Photosensor, Porous Silicon

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