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HomeKey Engineering MaterialsKey Engineering Materials Vol. 543Environmental UV-A Level Monitoring Using an...

Environmental UV-A Level Monitoring Using an Ag-TiO₂ Schottky Diode

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Abstract:

Here, we demonstrate the field applicability of the Ag-TiO₂ Schottky diodes for environmental UV level measurements. The device is visible-blind and it is shown that its maximum sensitivity coincides the environmental UV spectrum (UV-A). These features, along with its low voltage and biasing insensitivity of its operation, simplify the electronic circuit required for the fabrication of a hand-held UV monitoring system.

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Materials and Applications for Sensors and Transducers II

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Periodical:

Key Engineering Materials (Volume 543)

Pages:

113-116

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.543.113

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Online since:

March 2013

Authors:

Mehdi Mohamadzade Lajvardi, Farhad Akbari Boroumand

Keywords:

Schottky Diode, Silver, TiO₂, UV Sensor, UV-A, Visible-Blind

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] B. L. Diffey: Methods Vol. 28 (2002), p.4.

[2] E. Venditti, F. Bruge, P. Astolfi, I. Kochevar, E. Damiani: J. Dermatol. Sci. Vol. 63 (2011), p.55.

[3] P. Calvani, M. Girolami, S. Carta, M.C. Rossi, G. Conte: Nucl. Instrum. Methods Phys. Res. Sect. A Vol. 610 (2009), p.311.

[4] J. Granta, R. Bates, W. Cunningham, A. Blue, J. Melone, F. McEwan, S. Manolopoulos, V. O'Shea: Nucl. Instrum. Methods Phys. Res. Sect. A Vol. 563 (2006), p.27.

[5] E. Borchi, R. Macii, M. Bruzzi, M. Scaringella: Nucl. Instrum. Methods Phys. Res. Sect. A Vol. 658 (2011), p.121.

[6] W. Cunningham, A. Gouldwell, G. Lamb, J. Scott, K. Mathieson, P. Roy, R. Bates, P. Thornton, K.M. Smith, R. Cusco, M. Glaser, M. Rahman: Nucl. Instrum. Methods Phys. Res. Sect. A Vol. 487 (2002), p.33.

DOI: 10.1016/s0168-9002(02)00941-5

[7] R.S. Popovic, K. Solt, U. Falk, Z. Stoessel: Sens. Actuators A Vol. 22 (1989), p.553.

[8] G. Thungstrom, E. Dubaric, B.G. Svensson: Nucl. Instrum. Methods Phys. Res. Sect. A Vol. 460 (2001), p.165.

[9] F. Hossein-Babaei: Electron. Lett. Vol. 44 (2008), p.161.

[10] F. Hossein-Babaei, M.M. Lajvardi, F.A. Boroumand: Sens. Actuators A Vol. 173 (2012), p.116.

[11] E.W. McFarland, J. Tang: Nature Vol. 421 (2003), p.616.

[12] J. Tang, M. White, G.D. Stucky, E.W. McFarland: Electrochem. Commun. Vol. 5 (2003), p.497.

[13] W. -X. Li, C. Stampfl, M. Scheffler: Phys. Rev. B: Condens. Matter Mater. Phys. Vol. 65 (2002), p.075407.

[14] F. Hossein-Babaei, S. Abbaszadeh, M.S. Esfahani: IEEE Sens. J. Vol. 9 (2009), p.237.

[15] F. Hossein-Babaei, S. Rahbarpour: Sens. Actuators B Vol. 160 (2011), p.174.

[16] S. M. Sze and K. K. Ng in: Physics of Semiconductor Devices, chapter 13, John Wiley & Sons, Inc. publisher, Hoboken, New Jersey (2007).

[17] M. Razeghi, A. Rogalski: J. Appl. Phys. Vol. 79 (1996), p.7433.