Effect of Neutron Irradiation on Indium-Containing III-V Semiconductor Micromonocrystals

Inessa Bolshakova; Ivan Ďuran; Yaroslav Kost; Nelli Kovaljova; Karel Kovarik; Olena Makido; Jana Sentkerestiová; Agata Shtabaliuk; Fedir Shurygin; Ladislav Viererbl

doi:10.4028/www.scientific.net/KEM.543.273

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 543Effect of Neutron Irradiation on Indium-Containing...

Effect of Neutron Irradiation on Indium-Containing III-V Semiconductor Micromonocrystals

Abstract:

The paper presents the results of the studies into the effect exerted by neutron irradiation on the parameters of microcrystals of III-V group semiconductor materials (InSb, InAs and their solid solutions). The values of optimum initial charge carrier concentration for each of the materials under research, which would allow them to retain maximum radiation resistance, have been determined. The obtained results can be employed in assessing the industrial semiconductor sensors operability in radiation environment.

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Periodical:

Key Engineering Materials (Volume 543)

Pages:

273-276

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.543.273

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Online since:

March 2013

Authors:

Inessa Bolshakova, Ivan Ďuran, Yaroslav Kost, Nelli Kovaljova, Karel Kovarik, Olena Makido, Jana Sentkerestiová, Agata Shtabaliuk, Fedir Shurygin, Ladislav Viererbl

Keywords:

III-V Semiconductors, Micromonocrystals, Neutrons

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References

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