Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

Marius Dobromir; Alina Vasilica Manole; Simina Rebegea; Radu Apetrei; Maria Neagu; Dumitru Luca

doi:10.4028/www.scientific.net/KEM.543.277

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 543Characterization of Rutile N-Doped TiO2 Films...

Characterization of Rutile N-Doped TiO₂ Films Prepared by RF Magnetron Sputtering

Abstract:

Rutile N-doped TiO₂ thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

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Key Engineering Materials (Volume 543)

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277-280

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.543.277

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Online since:

March 2013

Authors:

Marius Dobromir, Alina Vasilica Manole, Simina Rebegea, Radu Apetrei, Maria Neagu, Dumitru Luca

Keywords:

N-Doped TiO₂, RF Magnetron Sputtering, Rutile

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