Properties of Optical Quantum Transition of GaN and CdS In Electron Deformation Potential Phonon Interacting Qusi-Two Dimensional System under Two Circularly Oscillating Fields

Abstract:

We study optical quantum transition line shapes (QTRSs) and optical quantum transition line widths (QTLWs) in relation to magnetic-field dependence properties of the electron-deformation potential phonon interaction system. We consider two systems - one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. The main purpose of this work is to compare QTLSs, which indicate absorption power, in the two oscillating external fields. Our results indicate that the QTLSs of right circularly oscillating external fields is larger than the QTLSs of left circularly oscillating external fields, while the opposite result is obtained for the QTLWs. Through the analysis of this work , we found the increasing properties of QTLW and QTLS of GaN and CdS with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.(PACS: 72.10.Bg,72.10.Di)

• Periodical: Key Engineering Materials (Volume 547)
• Pages: 165-172
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.547.165
• Online since: April 2013
• Authors: S.H. Lee, J.Y. Sug, J.H. Park
• Keywords: Electron Phonon Coupling System, Projected Liouville Equation Method, Quantum Transition Line Shapes (QTLS), Quantum Transition Line Widths (QTLW), Quantum Transport Theory, Response Formula, Scattering Factor Formula

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[1] Material constant of GaN Symbol Contents Value Effective mass of electron Effective mass of hole Mass density Characteristic constant Characteristic constant Electromechanical constant Speed of sound Energy gap Deformation potential constant Length of well of z direction Table.

DOI: 10.2514/6.2023-2432.vid

[1] Material constant of CdS Symbol Contents Value Effective mass of electron Effective mass of hole Mass density Characteristic constant Characteristic constant Electromechanical constant Speed of sound Energy gap Deformation potential constant Length of well of z direction (a) (b) Fig. 1. (a)Temperature dependence of QTLW of GaN , with = 220, 394, 513, 550 and 720 m (from the top line to the bottom line). (b) Comparisons of the temperature dependence of QTLW, , and with =394m. Fig. 2 The relativity frequency dependence of (QTLS) of GaN and the magnetic field dependence of the absorption power, (QTLS) with= 220, 394, 513, 550 and 720 m at T=50K. (a) (b) Fig. 3. (a)Temperature dependence of QTLW of CdS , with = 220, 394, 513, 550 and 720 m (from the top line to the bottom line). (b) Comparisons of the temperature dependence of QTLW, , and with =394m. Fig. 4. The relativity frequency dependence of of CdS (QTLS) and the magnetic field dependence of the absorption power. 1.