A Novel Method to Modify the Lapping Uniformity for Silicon Wafer

Abstract:

In this paper, a novel lapping method based on regulating the position of carrier centroid is proposed to modify interfacial normal pressure uniformity. Eight special points are selected to represent carrier weight. This lapping process can be divided into initial stage, regulated stage and stable stage. The purpose of initial stage is calculating the position of carrier centroid according to the equivalent mass of eight points. The regulated stage is to decrease total thickness variation (TTV) by regulating the position of weight. Finally, the stable stage will keep uniformity of material removal rate (MRR) uniform at each point. A 3-inch and 400 μm thickness silicon wafer is lapped to demonstrate the feasibility of this method. We can find that TTV of this wafer decreases from initial stage 20 μm to 3 μm and remain constant. Therefore, the uniformity of MRR has been greatly improved by this novel lapping method.

• Periodical: Key Engineering Materials (Volumes 562-565)
• Pages: 790-795
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.562-565.790
• Online since: July 2013
• Authors: Wen Jia Zuo, Xiao Hui Du, Hao Er Zhang, Yuan Zhe Su, Ting Ping Lei, Ling Yun Wang, Dao Heng Sun
• Keywords: Lapping Uniformity, Material Removal Rate (MRR), Silicon Wafer, Total Thickness Variation

References

[1] F.W. Preston, The theory and design of plate class polishing machine, Journal of the Society of Glass Technology. 11 (1927) 214–256.

[2] H. Hocheng, et al. Effects of kinematic variables on nonuniformity in chemical mechanical planarization, International Journal of Machine Tools & Manufacture. 40 (2000) 1651–1669.

DOI: 10.1016/s0890-6955(00)00013-4

[3] H. Hocheng and H. Y. Tsai, A kinematic analysis of CMP based on velocity model, in: Proc. 2nd Int. CMP-MIC. (1997) 277–280.

[4] D. Z. Chen and B. S. Lee, Pattern planarization model of chemical mechanical polishing, J. Electrochem. Soc.. 146 (1999) 744–748.

DOI: 10.1149/1.1391674

[5] Tyan Feng, Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View, IEEE Transaction on Semiconductor Manufacturing. 4 (2007) 451–463.

DOI: 10.1109/tsm.2007.907625

[6] Wang D, Lee J, Holland K, Bibby T, Beaudoin S and Cale T, Von Mises stress in chemical-mechanical polishing processes, J Electrochem Soc. 144 (1997) 1122-1127.

DOI: 10.1149/1.1837542

[7] Srinivasa-Murthy C, Wang D, Beaudoin SP, Bibby T, Holland K and Cale TS, Stress distribution in chemical-mechanical polishing, Thin Solid Film. 308 (1997) 533-537.

DOI: 10.1016/s0040-6090(97)00433-1

[8] Lin Y Y and Lo S P, A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing process, Int J A dv Manuf Techonl. 22 (2003) 401-409.

[9] Yeau-Ren Jeng and Pay-Yau Huang, A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing, Journal of Tribology. 127 (2005) 190–197.

DOI: 10.1115/1.1828068

[10] J. Luo, and D. A. Dornfeld, 2001, Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling, IEEE Transaction on Semiconductor Manufacturing. 14 (2001) 112–133.

DOI: 10.1109/66.920723