Experimental Investigation of the Thermal Conductivity of the Titanium Carbide Thin Films on Silicon Substrate

Su Yuan Bai; Zheng Xing Huang; Zhe Nan Tang

doi:10.4028/www.scientific.net/KEM.562-565.821

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 562-565Experimental Investigation of the Thermal...

Experimental Investigation of the Thermal Conductivity of the Titanium Carbide Thin Films on Silicon Substrate

Abstract:

Thermal conductivities of the titanium carbide thin films with thickness ranging from 58 to 158 nm were measured at room temperature using the transient thermoreflectance technique. The results show that thermal conductivities of these films are lower than corresponding bulk material values. The reduction in the thermal conductivity can be attributed to the material microstructure brought by the thin film fabrication process. Both the film thickness and the atom ratio of Ti/C are the important factors. The thermal conductivity increases with the increasing film thickness and atom ratio of Ti/C. It also indicates that the material beneficial to thermal management and thermal design could be fabricated by improvement of the deposition techniques.

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Periodical:

Key Engineering Materials (Volumes 562-565)

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821-825

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.562-565.821

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Online since:

July 2013

Authors:

Su Yuan Bai, Zheng Xing Huang, Zhe Nan Tang

Keywords:

Thermal Conductivity (TC), Titanium Carbide Thin Film, Transient Thermoreflectance Technique

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