Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO3-0.3BaTiO3 Thin Films Fabricated by Chemical Solution Deposition

Article Preview

Abstract:

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

159-162

Citation:

Online since:

July 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S.B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D.G. Schlom, U.V. Waghmare, N.A. Spaldin, K.M. Rabe, M. Wuttig and R. Ramesh: Science Vol. 299 (2003), p.1719.

DOI: 10.1126/science.1080615

Google Scholar

[2] K.Y. Yun, D. Ricinschi, T. Kanashima, M. Noda and M. Okuyama: Jpn. J. Appl. Phys. Vol. 43 (2004), p. L647.

Google Scholar

[3] F. Bai, J. Wang, M. Wittig, J. -F. Li, N. Wang, A.P. Pyatakov, A.K. Zvezdin, L.E. Cross and D. Viehland: Appl. Phys. Lett. Vol. 86 (2005), p.032511.

DOI: 10.1063/1.1851612

Google Scholar

[4] F. Tyholdt, S. Jorgensen, H. Fjellvag and A.E. Gunnaes: J. Mater. Res. Vol. 20 (2005), p.2127.

Google Scholar

[5] S.K. Singh, H. Ishiwara and K. Maruyama: Appl. Phys. Lett. Vol. 88 (2006), p.262908.

Google Scholar

[6] M.M. Kumar, A. Srinivas, and S.V. Suryanarayana: J. Appl. Phys. Vol. 87 (2000), p.855.

Google Scholar

[7] S.O. Leontsevw and R.E. Eitel: J. Am. Ceram. Soc. Vol. 92 (2009), p.2957.

Google Scholar

[8] W. Sakamoto, Y. Hamazaki, H. Maiwa, M. Moriya and T. Yogo: Thin Solid Films Vol. 518 (2010), p.4256.

DOI: 10.1016/j.tsf.2009.12.102

Google Scholar

[9] A. Hieno, W. Sakamoto, M. Moriya and T. Yogo: Jpn. J. Appl. Phys. Vol. 50 (2011), p. 09NB04.

Google Scholar

[10] K. Sone, H. Naganuma, T. Miyazaki, T. Nakajima, and S. Okamura: Jpn. J. Appl. Phys. Vol. 49 (2010), p. 09MB03.

Google Scholar