Fabrication of BiFeO3-Bi(Zn1/2Ti1/2)O3 Solid Solution Thin Films Using Perovskite-Type Oxide Interface Layer

Mari Hayashi; Shintaro Yasui; Hiroshi Funakubo; Hiroshi Uchida

doi:10.4028/www.scientific.net/KEM.566.163

Paper Titles

Proton Storage Properties of Manganese Oxides with Tunnel Structures
p.145

The Microstructure of Titanium Oxide Films for Dye-Sensitized Solar Cells
p.149

Effects of Annealing Process on the Structure of Mn-Doped BiFeO₃ Thin Films
p.155

Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO₃-0.3BaTiO₃ Thin Films Fabricated by Chemical Solution Deposition
p.159

Fabrication of BiFeO₃-Bi(Zn_1/2Ti_1/2)O₃ Solid Solution Thin Films Using Perovskite-Type Oxide Interface Layer
p.163

Nano-Structure around 90° Domain Wall and Elastic Interaction with Misfit Dislocation in PbTiO₃ Thin Film
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Analysis of Lattice Defects in an Epitaxial PbTiO₃ Thick Film by Transmission Electron Microscopy
p.171

Optical and Electron Emission Properties of h-BN Films Codoped with Mg and O Atoms
p.175

Fabrication and Electrical Evaluation of MoSi₂-Si Composite Thin Films
p.179

HomeKey Engineering MaterialsKey Engineering Materials Vol. 566Fabrication of BiFeO3-Bi(Zn1/2Ti1/2)O3 Solid...

Fabrication of BiFeO₃-Bi(Zn_1/2Ti_1/2)O₃ Solid Solution Thin Films Using Perovskite-Type Oxide Interface Layer

Abstract:

Bi-based perovskite-type oxide materials such as BiFeO₃(BFO) and Bi (Zn_1/2Ti_1/2)O₃ and the related compounds receive much attention and have been developed actively as important candidates for Pb-free ferroelectric materials instead of toxic Pb-based perovskite oxide materials. Recently, many researches have been reported for thin films of Bi-based materials by various film-deposition techniques for actual application of semiconductive devices, microactuators, etc. In this study, we tried preferential crystal growth of BFZT films on semiconductive silicon substrates using uniaxial-(100)-oriented LaNiO₃ (LNO) buffer layer. BFO films were fabricated via chemical solution deposition (CSD) technique on platinized silicon wafer [(111)Pt/TiO₂/(100)S and (100)LNO-coated platinized silicon [(100)LNO/(111)Pt/TiO₂/(100)S substrates. XRD analysis indicated that the films fabricated on (111)Pt/TiO₂/(100)Si substrate consisted of randomly-oriented BFZT crystal with lower crystallinity. On the other hand, the films on (100)LNO/(111)Pt/TiO₂/(100)Si consisted of uniaxial-one-oriented BFZT crystal with higher crystallinity. The crystallization temperature these films were 500°C, respectively. These results suggest that the BFZT crystal was grown successfully on uniaxial oriented (100)LNO plane which also had perovskite-type crystal structure. Consequently, one-oriented BFZT films were prepared on Si substrate successfully using (100)LNO buffer layer.