Analysis of Lattice Defects in an Epitaxial PbTiO₃ Thick Film by Transmission Electron Microscopy

Abstract:

The microstructure of an epitaxial PbTiO₃ thick film was investigated by using transmission electron microscopy (TEM). An analysis of bright-field TEM (BFTEM) images revealed the existence of displacements along the [00 direction of PbTiO₃. High-resolution TEM (HRTEM) observation indicated that stacking faults parallel to the (001) plane of PbTiO₃ are formed in the thick film. Local strain fields around the stacking faults were quantified by geometric phase analysis of the HRTEM image. The measured strain suggested the presence of a pair of extrinsic and intrinsic stacking faults. The distance between an extrinsic stacking fault and an intrinsic one corresponds to two unit cells along the [00 direction of PbTiO₃. The formation of these stacking faults is considered to be associated with the strain relaxation of the film.

• Periodical: Key Engineering Materials (Volume 566)
• Pages: 171-174
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.566.171
• Online since: July 2013
• Authors: Kenta Aoyagi, Takanori Kiguchi, Yoshitaka Ehara, Hiroshi Funakubo, Toyohiko J. Konno
• Keywords: Ferroelectric, Thin Film, Transmission Electron Microscopy (TEM)

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