Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

Keiichi Sasajima; Hiroshi Uchida

doi:10.4028/www.scientific.net/KEM.566.187

Paper Titles

Nano-Structure around 90° Domain Wall and Elastic Interaction with Misfit Dislocation in PbTiO₃ Thin Film
p.167

Analysis of Lattice Defects in an Epitaxial PbTiO₃ Thick Film by Transmission Electron Microscopy
p.171

Optical and Electron Emission Properties of h-BN Films Codoped with Mg and O Atoms
p.175

Fabrication and Electrical Evaluation of MoSi₂-Si Composite Thin Films
p.179

Preparation of (La,Sr)MnO₃ Thin Film by Chemical Solution Deposition
p.187

Fabrication of PIN Devices Including ZnO Quantum Dots
p.191

Evaluation of TiO₂ Films Fabricated by Aerosol Deposition
p.195

Effects of Particle Size on Properties of TiO₂ Nanoparticle Thin Films Deposited by Electrophoresis
p.199

Evaluation of TiO₂ Nanotube Thin Films Fabricated by Anodic Oxidation
p.204

HomeKey Engineering MaterialsKey Engineering Materials Vol. 566Preparation of (La,Sr)MnO3 Thin Film by Chemical...

Preparation of (La,Sr)MnO₃ Thin Film by Chemical Solution Deposition

Abstract:

Thin films of (La,Sr)MnO₃ (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO₃ buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

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Key Engineering Materials (Volume 566)

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187-190

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https://doi.org/10.4028/www.scientific.net/KEM.566.187

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Online since:

July 2013

Authors:

Keiichi Sasajima, Hiroshi Uchida

Keywords:

(La,Sr)MnO₃, Chemical Solution Deposition, Electrical Resistivity, Thin Film

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