Fabrication of PIN Devices Including ZnO Quantum Dots

Abstract:

Films containing ZnO quantum dots (ZnO QDs) with ca.5 nm in size were grown at 125°C by chemical vapor deposition. An emission is seen at a wavelength of 367 nm in photoluminescence spectra of the ZnO QDs, and its intensity is enhanced after the deposition of a Ga₂ZnO₄ film on the ZnO QDs. Using the films of ZnO QDs, we fabricated PIN devices constructed from In_1.8Zn_0.2O₃ / InGaZnO₄ / ZnO QDs / Ga₂ZnO₄ / Ni_0.7Zn_0.3O / Ni. The PIN devices exhibit good rectification characteristics.

• Periodical: Key Engineering Materials (Volume 566)
• Pages: 191-194
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.566.191
• Online since: July 2013
• Authors: Xin Yu Zhang, Kenkichiro Kobayashi
• Keywords: Ga₂ZnO₄ Films, Ni_0.7Zn_0.3O Films, PIN Devices, ZnO Quantum Dots

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