Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots

Jing Liu; Miftakhul Huda; Zulfakri bin Mohamad; Hui Zhang; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.596.88

Paper Titles

Functional-Group-Retaining Polymerization of Hydroxyethyl Methacrylate by Atmospheric Pressure Non-Equilibrium Plasma
p.65

Fabrication of 6-nm-Sized Nanodot Arrays with 12 nm-Pitch along Guide Lines Using both Self-Assembling and Electron Beam-Drawing for 5 Tbit/in² Magnetic Recording
p.73

Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.² Patterned Media
p.78

Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly
p.83

Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots
p.88

Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling
p.92

Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography
p.97

Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography
p.101

Controlled Crystallization Process of Phase Change Memory Device by a Separate Heater Structure
p.107

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Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots

Abstract:

We investigated the fabrication of self-assembled nanodot array using poly (styrene)-poly (dimethyl-siloxane) (PS-PDMS) block copolymer and its transfer technique as a promising method to fabricate magnetic nanodot arrays for ultrahigh density recording. A carbon (C) layer with a high etch-resistance was especially adopted for magnetic nanodot fabrication. We fabricated PDMS nanodot using PS-PDMS block copolymer with a molecular mass of 11,700-2,900 g/mol. The nanodots were first transferred into silicon (Si) layer and then into C layer on Si substrate by carbon tetrafluoride (CF₄) and oxygen (O₂) reactive ion etching (RIE), respectively. We succeeded in fabricating C nanodots with a diameter of 10 nm and an average pitch of 20 nm.