Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling

Zulfakri bin Mohamad; Miftakhul Huda; Takuya Komori; Rosalena Irma Alip; Hui Zhang; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.596.92

Paper Titles

Fabrication of 6-nm-Sized Nanodot Arrays with 12 nm-Pitch along Guide Lines Using both Self-Assembling and Electron Beam-Drawing for 5 Tbit/in² Magnetic Recording
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Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.² Patterned Media
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Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly
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Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots
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Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling
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Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography
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Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography
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Controlled Crystallization Process of Phase Change Memory Device by a Separate Heater Structure
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Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 596Fabrication of 25-nm-Pitched CoPt Magnetic Dot...

Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling

Abstract:

In this study, we have fabricated 25-nm-pitched magnetic dot arrays using electron beam lithography (EBL), reactive ion etching (RIE) and ion-milling. We have used double mask method with calixarene resist and carbon film as a hard mask to transfer fine pattern to CoPt magnetic film. We transferred the calixarene resist dot arrays to carbon layer using O₂ gas in RIE as a first mask, then transferred the carbon dot arrays to CoPt magnetic layer as a second hard mask using ion-milling. We demonstrated that double mask method is very suitable to fabricate 25-nm-pitched magnetic dot arrays with a dot size of 18 nm and a height of 15 nm for patterned media with 1 Tb/in².

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Key Engineering Materials (Volume 596)

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92-96

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.596.92

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December 2013

Authors:

Zulfakri bin Mohamad, Miftakhul Huda, Takuya Komori, Rosalena Irma Alip, Hui Zhang, You Yin, Sumio Hosaka

Keywords:

Calixarene, Electron Beam Lithography, Ion Milling, Magnetic Dot Arrays, Patterned Media, Reactive Ion Etching

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