Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device

Qi Wang; Yaomi Itoh; Tohru Tsuruoka; Tsuyoshi Hasegawa; Satoshi Watanabe; Shu Yamaguchi; Toshiro Hiramoto; Masakazu Aono

doi:10.4028/www.scientific.net/KEM.596.111

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 596Two Types of On-State Observed in the Operation of...

Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device

Abstract:

A redox-based three-terminal device was fabricated using Ta₂O₅ as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states.

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Periodical:

Key Engineering Materials (Volume 596)

Pages:

111-115

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.596.111

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Online since:

December 2013

Authors:

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Tsuyoshi Hasegawa, Satoshi Watanabe, Shu Yamaguchi, Toshiro Hiramoto, Masakazu Aono

Keywords:

Atom Transistor, Redox-Based Device, Ta₂O₅, Three-Terminal Device

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