Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography

Akie Nagao; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.596.101

Paper Titles

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Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling
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Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography
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Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography
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Controlled Crystallization Process of Phase Change Memory Device by a Separate Heater Structure
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Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device
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Influence of Atmosphere on Photo-Assisted Atomic Switch Operations
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Growth of Large Quantity ZnO Nanowires and their Optical Properties
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 596Monte Carlo Simulation of Electron Trajectory in...

Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography

Abstract:

We have developed a GUI(Graphical User Interface)-based Monte Carlo simulation tool for electron beam lithography. Simulation was executed by changing initial energy, thickness of resist, and target material. We focused on penetration range, backscattering coefficient and spatial distribution of lost energy. Comparison with other theory indicates that our simulation is reliable in the 10-50keV range of the energy of the electron. It seems that backscattering coefficient is strongly affected by the kind of atoms in the target, not initial energy.

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Periodical:

Key Engineering Materials (Volume 596)

Pages:

101-106

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.596.101

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Online since:

December 2013

Authors:

Akie Nagao, Sumio Hosaka

Keywords:

Backscattering Coefficient, Electron Beam Lithography, Monte Carlo Simulation

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