Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography

Hui Zhang; Takuya Komori; Jing Liu; Yu Long Zhang; Zulfakri bin Mohamad; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.596.97

Paper Titles

Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.² Patterned Media
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Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly
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Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots
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Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling
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Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography
p.97

Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography
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Controlled Crystallization Process of Phase Change Memory Device by a Separate Heater Structure
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Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device
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Influence of Atmosphere on Photo-Assisted Atomic Switch Operations
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Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography

Abstract:

We calculated the hydrogen silsesquioxane (HSQ) resist profiles with different contrast developers (γ from 1.9 to 8.1) to reveal the effect of resist contrast on pattern resolution performance. Based on our home-made development modeling, the suitable energy deposition distribution (EDD) regions for various developers were determined by evaluating the quality of simulated patterns. High contrast TMAH 2.3 wt%/NaCl 4 wt% developer was demonstrated that it is suitable to form very fine dot arrays with a size of 7 nm. Low contrast developer has the limitation of forming fine pattern with sufficient height. The simulation results indicated that increasing developer contrast is benefit to improve pattern resolution.