Microstructure and Electrical Properties of Y₂O₃ and Sb₂O₃ Co-Doped ZnO-Based Varistors

Abstract:

Through a conventional ceramic process, Y₂O₃ and Sb₂O₃ co-doped ZnO-based varistors were prepared. The microstructure and electrical properties of the as-prepared varistors were investigated. Y₂O₃ could act as an inhibitor to the growth of ZnO grains when working with Sb₂O₃. The mean size of ZnO grains in the Sb₂O₃ and Y₂O₃ co-doped samples was smaller than those of the samples only added with Y₂O₃ or Sb₂O₃. And with appropriately increased ratio of Y:Sb, it would result in increased sample densification. When the doping level of Y₂O₃ was small, the nonlinear coefficient and breakdown voltage of the varistors would increase with increasing doping amounts of Y₂O₃, and the leakage current would decrease. However, when Y₂O₃ was doped without Sb₂O₃, both the nonlinear coefficient and breakdown voltage of the varistors would decrease sharply, thus the leakage current increase dramatically. The electrical properties of the Sb₂O₃ and Y₂O₃ co-doped varistors would be better than those of the samples only added with Y₂O₃ or Sb₂O₃, and when the Y:Sb atom ratio was 5, the nonlinear coefficients, breakdown voltages and leakage current of the varistors reached their optimum values of 777 V/mm, 23 and 0.17 mA/cm², respectively.

• Periodical: Key Engineering Materials (Volumes 602-603)
• Pages: 830-835
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.602-603.830
• Online since: March 2014
• Authors: Xiu Li Fu, Yan Xu Zang, Zhi Jian Peng*
• Keywords: Doping, Electrical Properties, Sb₂O₃, Y₂O₃, ZnO-Bi₂O₃ Based Varistor

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