Thermoelectric Properties of Ni Doped P-Type BiCuSeO Oxyselenides

Abstract:

We report on the effect of Ni doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu₂Se₂)^2- layers alternately stacked with insulating (Bi₂O₂)²⁺ layers along c axis. After doping with Ni, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of ~231 μwm^-1K^-2 at 873 K. Coupled to low thermal conductivity, ZT at 873 K is increased from 0.35 for pristine BiCuSeO to 0.39 for Bi_0.95Ni_0.05CuSeO. However, the efficiency of Ni doping in the insulating (Bi₂O₂)²⁺ layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Ni doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr, Ba and Pb doped BiCuSeO.

• Periodical: Key Engineering Materials (Volumes 602-603)
• Pages: 906-909
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.602-603.906
• Online since: March 2014
• Authors: Yao Chun Liu, Jun Fu Liu, Bo Ping Zhang, Yuan Hua Lin*
• Keywords: BiCuSeO, Ni Doping, Thermoelectric Material, ZT

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