MOS Structures Containing Si Nanocrystals for Applications in UV Dosimeters

Abraham Arias; Nicola Nedev; Diana Nesheva; Mario Curiel; Emil Manolov; David Mateos; Valery Dzurkov; Benjamin Valdez; Oscar Contreras; Rigoberto Herrera; Irina Bineva; Jesus M. Siqueiros

doi:10.4028/www.scientific.net/KEM.605.380

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MOS Structures Containing Si Nanocrystals for Applications in UV Dosimeters
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 605MOS Structures Containing Si Nanocrystals for...

MOS Structures Containing Si Nanocrystals for Applications in UV Dosimeters

Abstract:

Metal-Oxide-Semiconductor structures with semitransparent Au top electrode and containing Si nanocrystals in the gate dielectric are fabricated and studied. The structures can be charged negatively or positively by injecting or extracting electrons from the top electrode. Illumination with 395-400 nm, 10.4 mW UV light source causes discharge of previously charged structures with rate which varies between 2 mV/s and 12 mV/s. The discharge rate depends on the sign of the trapped charge, as well on the internal electric field in the gate dielectric.

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Periodical:

Key Engineering Materials (Volume 605)

Pages:

380-383

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.605.380

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Online since:

April 2014

Authors:

Abraham Arias*, Nicola Nedev, Diana Nesheva, Mario Curiel, Emil Manolov, David Mateos, Valery Dzurkov, Benjamin Valdez, Oscar Contreras, Rigoberto Herrera, Irina Bineva, Jesus M. Siqueiros

Keywords:

C-V, MOS Structure, Si Nanocrystals, TEM, UV Dosimeter

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