Visible Light Sensor Based on Metal-Oxide-Semiconductor Structure

Abstract:

We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to measure visible and UV light intensity or as a light switch. The output signal is change of the inversion capacitance under light illumination at a given bias. The device power consumption is very low and the output signal is independent of the temperature.

• Periodical: Key Engineering Materials (Volume 605)
• Pages: 384-387
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.605.384
• Online since: April 2014
• Authors: Nicola Nedev*, Abraham Arias, Mario Curiel, Roumen Nedev, David Mateos, Emil Manolov, Diana Nesheva, Benjamin Valdez, Rigoberto Herrera, Alejandro Sanchez
• Keywords: Inversion Capacitance, MOS Structure, Photodetector, UV, Visible Light

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