Gas Sensing with Atomic Layer Deposited Dielectric Thin Film

V.A.T. Dam; M.A. Blauw; S.H. Brongersma; R. van Schaijk

doi:10.4028/www.scientific.net/KEM.605.71

Paper Titles

Study of Free-Standing Electroded PZT Thick-Films: From Materials to Microsystems
p.55

The Effect of Frequency on the Flow and Particle Collection Patterns under Electroosmosis
p.59

Dielectric Behaviour of BaTiO₃-SrTiO₃ Solid Solutions Fabricated by High-Energy Ball Milling
p.63

Application of Response Surface Methodology to Synthesize Appropriate Molecularly Imprinted Polymer for Diazinon
p.67

Gas Sensing with Atomic Layer Deposited Dielectric Thin Film
p.71

Functionalized Carbon Nanotubes-Based Gas Sensors for Pollutants Detection: Investigation on the Use of a Double Transduction Mode
p.75

Formation of Vanadium Oxide Thin Films Prepared from Aqueous Sol-Gel System
p.79

Biosensors with Nuclear Tracks and Embedded Membranes
p.83

Ethanol Sensing with Cu-BTC Metal Organic Framework: Mass Sensitive, Work Function Based and IR Investigations
p.87

HomeKey Engineering MaterialsKey Engineering Materials Vol. 605Gas Sensing with Atomic Layer Deposited Dielectric...

Gas Sensing with Atomic Layer Deposited Dielectric Thin Film

Abstract:

A metal-insulator-semiconductor (MIS) capacitor with La2O3 dielectric is proposedin this work as a sensor for measuring CO2 in air. In this device, a 10 nm thick La2O3 dielectriclayer, which serves as a CO2 sensitive material, was atomic-layer-deposited (ALD) on p-typesilicon. Change in the at band voltage (VFB) of the MIS capacitor due to the reactionbetween CO2 and oxide layer and its interfaces, is used as the gas sensitive parameter of thesensor. The deposition temperature for the La2O3 layer has been optimized for maximizingCO2 sensitivity. The process ow including post annealing (rapid thermal annealing) has beenoptimized to allow further possibility to integrate the sensor with CMOS read-out circuitries. The sensor shows a sensitivity of 84 mV per decade to CO2 in air in a concentration rangefrom 300-5000 ppm at ambient temperature with a response time (t90) of 34 minutes.

You might also be interested in these eBooks

Materials and Applications for Sensors and Transducers III

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 605)

Pages:

71-74

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.605.71

Citation:

Cite this paper

Online since:

April 2014

Authors:

V.A.T. Dam*, M.A. Blauw, S.H. Brongersma, R. van Schaijk

Keywords:

Atomic Layer Deposition, Carbon Dioxide, Gas Sensing, Metal Oxide, Metal-Insulator-Semiconductor Capacitor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] A. Haensch, D. Koziej, M. Niederberger, N. Barsan, U. Weimar, Procedia Engineering Vol. 5 (2010), p.139

DOI: 10.1016/j.proeng.2010.09.067

Google Scholar

[2] M. Leskel, K. Kukli, M. Ritala, J. of Alloys and Compounds Vol. 418 (2006), p.27.

Google Scholar

[3] E. H. Nicolian and J. R. Brews, in MOS (Metal Oxide Semiconductor) Physics and Technology, Chapter 10, pp.423-491, John Wiley & Sons, New York (2003).

Google Scholar