Paper Titles

Densification of Nanocrystalline Ceramics by Combustion Reaction and Quick Pressing
p.204

Microstructure and Properties of Aluminum-Copper Composites Prepared by Hot-Pressure Sintering
p.212

Effect of Al₂O₃ on Microstructure and Ionic Conductivity of Li₇La₃Zr₂O_₁₂ Solid Electrolytes Prepared by Plasma Activated Sintering
p.217

Microstructure of LiAl₅O₈ and LiAlO₂ Films Prepared by Laser CVD
p.223

Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD
p.227

Surface Modification of Silicon Carbide Powder with Silica Coating by Rotary Chemical Vapor Deposition
p.232

Synthesis and Evaluation of Fe Nanowire and Nanorod by Electro-Chemical Process
p.237

Preparation and Density Control of PMMA Microcellular Foams via Supercritical Carbon Dioxide Foaming
p.242

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method
p.247

HomeKey Engineering MaterialsKey Engineering Materials Vol. 616Effects of C/Si Ratio on the Structure of β-SiC...

Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD

Article Preview

Abstract:

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl₄ and CH₄as precursors, and H₂ as carrier gas. The maximum deposition rate was 1125 μm h⁻¹. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

You might also be interested in these eBooks

Advanced Ceramics and Novel Processing

Info:

Periodical:

Key Engineering Materials (Volume 616)

Pages:

227-231

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.616.227

Citation:

Cite this paper

Online since:

June 2014

Authors:

Ming Xu Han, Wei Zhou, Ding Heng Zheng, Rong Tu*, Song Zhang, Takashi Goto

Keywords:

Halide CVD, Ratio of C/Si (R_C/Si), Total Pressure (P_tot), β-SiC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] P.Y. Dai, Y.Z. Wang, G.L. Liu, B. Wang, Y.G. Shi, J.F. Yang, G.J. Qiao, H.J. Wang, Fabrication of highly dense pure SiC ceramics via the HTPVT method, Acta Mater. 59 (2011) 6257-6263.

DOI: 10.1016/j.actamat.2011.06.035

[2] X. Zhao, X. He, Y. Sun, J. Yi, P. Xiao, Superhard and tougher SiC/Diamond-like-carbon composite films produced by electron beam physical vapor deposition, Acta Mater. 57 (2009) 893-902.

DOI: 10.1016/j.actamat.2008.10.031

[3] C.R. Eddy Jr., D.K. Gaskill, Silicon carbide as a platform for power electronics, Science. 324 (2009) 1398-1400.

DOI: 10.1126/science.1168704

[4] W.C. Lien, N. Ferralis, C. Carraro, Growth of epitaxial 3C-SiC films on Si(100) via low temperature SiC buffer layer, Cryst. Growth Des.10 (2009) 36-39.

DOI: 10.1021/cg901189k

[5] C.A. Zorman, A.J. Fleischman, A.S. Dewa, M. Mehregany, C. Jacob, S. Nishino, P. Pirouz, Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafer by atmospheric pressure chemical vapor deposition, J. Appl. Phys. 78 (1995) 5136-5138.

DOI: 10.1063/1.359745

[6] M. Mehregany, C.A. Zorman, SiC MEMS: opportunities and challenges for applications in harsh environments, Thin Solid Films. 355 (1999) 518-524.

DOI: 10.1016/s0257-8972(99)00374-6

[7] K. Nishino, J.A. Powell, H.A. Will, Production of large-area single-crystal wafer of cubic SiC for semiconductor devices, Appl. Phys. Lett. 42 (1983) 460-462.

DOI: 10.1063/1.93970

[8] T. Yoshinobu, H. Mistui, Y. Tarui, T. Fuyuki, H. Matsunami, Heteroepitaxial growth of Single crystalline 3C-SiC on Si substrate by gas source molecular beam epitaxy, J. Appl. Phys. 72 (1992) 2006-2013.

DOI: 10.1063/1.351628

[9] M. Kitabatake, M. Deguchi, T. Hirao, Simulation and experiments of SiCheteroepitaxial growth on Si(001) surface, J. Appl. Phys. 74 (1993) 4438-4425.

DOI: 10.1063/1.354385

[10] V. Radmilovic, U. Dahmen, D. Gao, C.R. Stoldt, C. Carraro, R. Maboudian, Formation of <111> fiber texture in β-SiC films deposition on Si(100) substrates, Diam. Relat. Mater. 16 (2007) 74-80.

DOI: 10.1016/j.diamond.2006.03.017

[11] M. Kim, J. Ohta, A. Kobayashi, H. Fujika, M. Oshima, Low-temperature growth of high quality AlN films on carbon face 6H-SiC, Phys. Status. Solidi. Lett. 2 (2008) 13-15.

DOI: 10.1002/pssr.200701246

[12] R.F. Davis, T. Gehrke, K. J. Linthicum, T.S. Zheleva, E.A. Preble, P. Rajagopal, C.A. Zorman, M. Mehregany, Pendeo-expitaxial growth of thin films of gallium nitride and related materials and their characterization, J. Cryst. Growth. 225 (2001) 134-140.

DOI: 10.1016/s0022-0248(01)00836-3

[13] M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito, Characterization of MOVPE InN films grown on 3C-SiC/Si(111) templates, Phys. Status. Solidi. C. 4 (2007) 2441-2444.

DOI: 10.1002/pssc.200674845

[14] L. Li, Z. Chen, T. Lin, H. Pu, J. Li, Q. Li, Structure analysis of SiCGe films grown on SiC, Surf. Interface. Anal. 40 (2008) 935-938.

DOI: 10.1002/sia.2806

[15] A.Y. Polyakov, M.A. Fanton, M. Skowronski, H.J. Chung, S. Nigam, S.W. Huh, Halide-CVD growth of bulk SiC crystals, Mater. Sci. Forum. 527 (2006) 21-26.

DOI: 10.4028/www.scientific.net/msf.527-529.21

[16] S. Nishino, H. Suhara, H. Ono, H. Matsunami, Epitaxial growth and electric characteristics of cubic SiC on silicon, J. Appl. Phys. 61 (1987) 4889-4893.

DOI: 10.1063/1.338355

[17] S. Rajasekhara, B.H. Neuner, C.A. Zorman, N. Jegenyes, G. Ferro, G . Shvets, P. J. Ferreira, D. Kovar, The influence of imprities and planar defects on the infrared properties of silicon carbide films, Appl. Phys. Lett. 98 (2011) 191904-1-3.

DOI: 10.1063/1.3585098

[18] Y. Komura, A. Tabata, T. Narita, A. Kondo, Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system, Thin Solid Films 516 (2008) 633-636.

DOI: 10.1016/j.tsf.2007.06.065

[19] E. Hurtos, J. Rodriguez-Viejo, J. Bassas, M.T. Clavaguera-Mora, K. Zekentes, Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si(100) substrates, Mater. Sci. Eng. B. 61 (1999) 549-552.

DOI: 10.1016/s0921-5107(98)00471-1

[20] A. Ellison, J. Zhang, A. Henry, E. Janzen, Epitaxial growth of SiC in a chimney CVD reactor, J. Cryst. Growth. 235 (2002) 225-239.

DOI: 10.1016/s0022-0248(01)02129-7

[21] G. Aylward, T. Findlay, SI Chemical Data, 4th ed.; John Wiley & Sons: Australia, (1998) p.115.

[22] F. Liao, S. Park, J.M. Larson, M.R. Zachariah, S.L. Girshick, High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma, Mater. Lett. 57 (2003) 1982-1986.

DOI: 10.1016/s0167-577x(02)01116-3

[23] S.W. Huh, H.J. Chung, S. Nigam, A.Y. Polyakov, Q. Li, M. Skowronski, E.R. Glaser, W.E. Carlos, B.V. Shanabrook, M.A. Fanton, and N. B. Smirnov, J. Appl. Phys.99 (2006) 013508.

DOI: 10.1063/1.2150593

[24] H.T. Chiu, J.S. Hsu, Low pressure chemical vapor deposition of silicon carbide thin films from hexamthydisilane, Thin Solid Films. 252 (1994) 13-18.

DOI: 10.1016/0040-6090(94)90818-4

[25] M.B.J. Wijesundara, G. Valente, W.R. Ashurst, R.T. Howe, A.P. Pisano, C. Carraro, R. Maboudian, Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor, J. Electrochem. Soc. 151 (2004) C210-C214.

DOI: 10.1149/1.1646141

[26] M.T. Clavaguera-Mora, J. Rodriguez-Viejo, Z. El Felk, E. Hutros, S. Berberich, J. Stoemenos, N. Clavaguera, Growth of SiC films obtained by LPCVD, Diam. Relat. Mater. 6 (1997) 1306-1310.

DOI: 10.1016/s0925-9635(97)00084-8

[27] M.G. So, J.S. Chun. Growth and structure of chemical vapor deposited silicon carbide form methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °C, J. Vac. Sci. Technol. A. 6 (1988) 5-8.

DOI: 10.1016/0042-207x(89)90903-2

[28] B.J. Choi, S.H. Jeun, D.R. Kim, The effects of C3H8 on the chemical vapor deposition of silicon carbide in CH3SiCl3+H2 system, J. Eur. Ceram. Soc. 9(1992) 357-363.

DOI: 10.1016/0955-2219(92)90094-t

[29] H.E. Cheng, T.T. Lin, M.H. Hon, Multiple twins induced <110> preferred growth in TiN and SiC films prepared by CVD, Scripta Mater. 35 (1996) 113-116.

DOI: 10.1016/1359-6462(96)00091-7

[30] S. Zhang, Q. XU, R. Tu, T. Goto, L. Zhang, High-speed preparation of <111>- and <110>-oriented β-SiC films by laser chemical vapor deposition, J. Am. Ceram. Soc.

DOI: 10.1111/jace.12706