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HomeKey Engineering MaterialsKey Engineering Materials Vol. 616High-Speed Deposition of SiC Thick Film by Halide...

High-Speed Deposition of SiC Thick Film by Halide Precursor

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Abstract:

Polycrystalline ڂ˽SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl₄ + CH₄ and H₂ at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (T_dep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing T_dep. The maximum deposition rate (R_dep) of 1125 ڌ̽˰̸⁻¹ has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing T_dep.

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Periodical:

Key Engineering Materials (Volume 616)

Pages:

37-42

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.616.37

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Online since:

June 2014

Authors:

Ming Xu Han, Wei Zhou, Ding Heng Zheng, Rong Tu*, Song Zhang, Takashi Goto

Keywords:

Deposition Rate (R_dep), Deposition Temperature (T_dep), Halide CVD, High-Speed, β-SiC

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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