Effect of Gd Substitution on Electrical Characteristics and Microstructures of Bi4Ti3O12 Ceramics

X.A. Mei; M. Chen; J. Liu; R.F. Liu

doi:10.4028/www.scientific.net/KEM.633.261

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Effect of Gd Substitution on Electrical...

Effect of Gd Substitution on Electrical Characteristics and Microstructures of Bi₄Ti₃O₁₂ Ceramics

Abstract:

The electrical properties of Gd-doped bismuth titanate Bi_4-xGd_xTi₃O₁₂ (BGT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r ) and coercive field (E_c) of the BGT ceramic with x=0.8 were above 16μC/cm² and 70KV/cm , respectively.

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Key Engineering Materials (Volume 633)

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261-264

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https://doi.org/10.4028/www.scientific.net/KEM.633.261

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Online since:

November 2014

Authors:

X.A. Mei, M. Chen, J. Liu, R.F. Liu

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Bismuth Titanate, Doping, Ferroelectric, Film

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