Ferroelectric Properties and Microstructures of Tb2O3-Doped Bismuth Titanate Ceramics

X.A. Mei; M. Chen; C.Q. Huang; R.F. Liu

doi:10.4028/www.scientific.net/KEM.633.265

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Ferroelectric Properties and Microstructures of...

Ferroelectric Properties and Microstructures of Tb₂O₃-Doped Bismuth Titanate Ceramics

Abstract:

The electrical properties of Tb₂O₃-doped bismuth titanate,Bi_4-xTb_xTi₃O₁₂ (BTT) ceramics prepared by a conventional electroceramic technique have been investigated. XRD analyses indicted Bi-layered perovskite structure in all samples, and revealed that Bi ions were only substituted near the Ti-O octahedron layers by Tb ions. SEM micrographs show randomly oriented and plate-like morphology. The remanent polarization ( P_r ) and coercive field ( E_c) of the BTT ceramics with x=0.75 were above 16μC/cm² and 75KV/cm, respectively. The large value of remanent polarization and low coercive field of Tb-doped bismuth titanate ceramics promote these materials to potential applications.

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Key Engineering Materials (Volume 633)

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265-268

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.633.265

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Online since:

November 2014

Authors:

X.A. Mei, M. Chen, C.Q. Huang, R.F. Liu

Keywords:

Bismuth Titanate, Doping, Ferroelectric, Film

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