Ferroelectric Properties of Bi3.25Ho0.75Ti2.97V0.03O12

Min Chen; X.A. Mei; C.Q. Huang

doi:10.4028/www.scientific.net/KEM.633.362

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Ferroelectric Properties of...

Ferroelectric Properties of Bi_3.25Ho_0.75Ti_2.97V_0.03O₁₂

Abstract:

Bi_3.25Ho_0.75Ti_2.97V_0.03O₁₂ (BHTV) ceramics was prepared by solid state reaction. This sample had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BHTV caused a large shift of the Curie temperature ( T_C ) of Bi₄Ti₃O₁₂ (BIT) from 675 °C to 398 °C. The remanent polarization and the coercive field of the BHTV ceramics were 28μC/cm² and 56kV/cm at an electric field of 90kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 298 and 2.8×10^-3 at 1MHz, respectively. These ferroelectric properties of BHTV ceramics are superior to V-doped Bi₄Ti₃O₁₂ (~20μC/cm² and 80kV/cm) and (Sr, Ta)-doped Bi₄Ti₃O₁₂ (~12μC/cm² and 71kV/cm) ceramics. In addition, the dense ceramics of BHTV could be obtained by sintering at temperatures 100─200 °C lower than those of the SrBi₂Ta₂O₉ system.

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Key Engineering Materials (Volume 633)

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362-365

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https://doi.org/10.4028/www.scientific.net/KEM.633.362

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November 2014

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Min Chen, X.A. Mei, C.Q. Huang

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Dielectric, Doping, Ferroelectric

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