Electrical Characteristics and Microstructures of Pr₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Pr₂O₃-doped bismuth titanate (Bi_4-xPr_xTi₃O₁₂: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0..0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r ) and coercive field (E_c) of the BPT Film with x=0.75 were above 30μC/cm² and 75KV/cm , respectively.

• Periodical: Key Engineering Materials (Volume 633)
• Pages: 370-373
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.633.370
• Online since: November 2014
• Authors: Chong Qing Huang, X.A. Mei, M. Chen, B. Li
• Keywords: Bismuth Titanate, Doping, Ferroelectric, Film

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