Ferroelectric Characteristics of Bi4-xPrxTi3O12 Ceramics

Rui Fang Liu; X.A. Mei; M. Chen; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/KEM.633.382

Paper Titles

Electrical Characterization and Microstructures of Bi_4-xDy_xTi₃O₁₂ Ceramics
p.366

Electrical Characteristics and Microstructures of Pr₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.370

Ferroelectric Properties of Bismuth Titanate Ceramics by Tm₂O₃/V₂O₅ Substitution
p.374

Ferroelectric Properties and Microstructures of Bi_4-_xDy_xTi₃O₁₂ Thin Films
p.378

Ferroelectric Characteristics of Bi_4-xPr_xTi₃O₁₂ Ceramics
p.382

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb₂O₃/V₂O₅ Substitution
p.386

The Effect of La Substitution on the Ferroelectric Properties of Bi₄Ti₃O₁₂ Ceramics
p.390

Effect of Sc₂O₃/V₂O₅ Substitution on the Ferroelectric Properties of Bi₄Ti₃O₁₂ Ceramics
p.394

The Influence of Pulse Width on Microstructure and Mechanical Properties of CrNx Coatings Deposited by HPPMS
p.398

HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Ferroelectric Characteristics of Bi4-xPrxTi3O12...

Ferroelectric Characteristics of Bi_4-xPr_xTi₃O₁₂ Ceramics

Abstract:

The electrical properties of Pr₂O₃-doped bismuth titanate,Bi_4-xPr_xTi₃O₁₂ (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all ceramics. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r ) and coercive field (E_c) of the BPT ceramic with x=0.75 were above 18μC/cm² and 65KV/cm , respectively.

You might also be interested in these eBooks

Testing and Evaluation of Inorganic Materials V

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 633)

Pages:

382-385

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.633.382

Citation:

Cite this paper

Online since:

November 2014

Authors:

Rui Fang Liu*, X.A. Mei, M. Chen, C.Q. Huang, J. Liu

Keywords:

Bismuth Titanate, Doping, Ferroelectric, Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] U. Chon, K. Kim, H. M. Jang, et al.: Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations, Appl. Phys. Lett. 79 (2001) 3137-3139.

DOI: 10.1063/1.1415353

Google Scholar

[2] D. Wu, A. D. Li, T. Yu, et al.: Polarization and electrical properties of Bi3. 25Pr0. 75Ti3O12 ferroelectric thin films, Appl. Phys. Lett. 78 (2004) 95-99.

Google Scholar

[3] B. H. Park, B. S. Kang, S. D. Bu, et al.: Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature, 401 (1999) 682-685.

DOI: 10.1038/44352

Google Scholar

[4] C. A. P. De Araujo, J. D. Cuchiare, L. D. Mc Millan, et al.: Fatigue-free ferroelectric capacitors, Nature, 374 (1995) 627-629.

Google Scholar

[5] T. Kojima, T. Sakai, T. Watanabe, et al.: Large remanent polarization of (Bi, Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 80 (2002) 2746-2748.

DOI: 10.1063/1.1468914

Google Scholar

[6] H. Matsuda, S. Ito, T. Iijima, Orientation behavior and ferro-piezoelectric properties of Bi4-xPrxTi3O12 polycrystalline films, Jpn. J. Appl. Phys. 42 (2003) 5977-5980.

DOI: 10.1143/jjap.42.5977

Google Scholar

[7] W. Wang, J. Zhu, X. Y. Mao, et al.: Properties of Tunsten-doped Bi4Ti3O12-Sr Bi4Ti4O15 intergrouth ferroelectrics, Mater. Res. Bull. 42 (2007) 274-280.

Google Scholar

[8] H. S. Gu, A. X. Kuang, S. M. Wang, et al.: Synthesis and ferroelectric properties of c-axies oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon, Appl. Phys. Lett. 68(1996): 1209-1210.

DOI: 10.1063/1.115971

Google Scholar