Ferroelectric Properties of Bismuth Titanate Ceramics by Tb2O3/V2O5 Substitution

Rui Fang Liu; X.A. Mei; M. Chen; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/KEM.633.386

Paper Titles

Electrical Characteristics and Microstructures of Pr₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.370

Ferroelectric Properties of Bismuth Titanate Ceramics by Tm₂O₃/V₂O₅ Substitution
p.374

Ferroelectric Properties and Microstructures of Bi_4-_xDy_xTi₃O₁₂ Thin Films
p.378

Ferroelectric Characteristics of Bi_4-xPr_xTi₃O₁₂ Ceramics
p.382

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb₂O₃/V₂O₅ Substitution
p.386

The Effect of La Substitution on the Ferroelectric Properties of Bi₄Ti₃O₁₂ Ceramics
p.390

Effect of Sc₂O₃/V₂O₅ Substitution on the Ferroelectric Properties of Bi₄Ti₃O₁₂ Ceramics
p.394

The Influence of Pulse Width on Microstructure and Mechanical Properties of CrNx Coatings Deposited by HPPMS
p.398

Influence of HF-SCG Immersion Treatment on Corrosion Resistance of the Ultrasonic Micro-Arc Oxidation Bio-Coating on Pure Magnesium
p.402

HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Ferroelectric Properties of Bismuth Titanate...

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb₂O₃/V₂O₅ Substitution

Abstract:

The ferroelectricity of Bi_3.2Tb_0.8Ti₃O₁₂ (BTT) and Bi_3.2Tb_0.8Ti_2.97V_0.03O₁₂ (BTTV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (P_r) and coercive field (E_c) of the BTT ceramics are 16 μC/cm² and 75kV/cm, respectively. Furthermore, V substitution improves the P_r value of the BTT ceramics up to 26 μC/cm², which is much larger than that of the BTT ceramics. Therefore, co-sustitution of Tb and V in Bi₄Ti₃O₁₂(BIT) ceramic is effective for the improvement of its ferroelectricity.

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Key Engineering Materials (Volume 633)

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386-389

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https://doi.org/10.4028/www.scientific.net/KEM.633.386

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Online since:

November 2014

Authors:

Rui Fang Liu, X.A. Mei, M. Chen, C.Q. Huang, J. Liu

Keywords:

Ceramic, Dielectric, Doping, Ferroelectric, Microstructure

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References

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