Effect of Sc2O3/V2O5 Substitution on the Ferroelectric Properties of Bi4Ti3O12 Ceramics

X.B. Liu; X.A. Mei; M. Chen; B. Li

doi:10.4028/www.scientific.net/KEM.633.394

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Effect of Sc2O3/V2O5 Substitution on the...

Effect of Sc₂O₃/V₂O₅ Substitution on the Ferroelectric Properties of Bi₄Ti₃O₁₂ Ceramics

Abstract:

The ferroelectricity of Bi_3.25Sc_0.75Ti₃O₁₂ (BST), and Bi_3.25Sc_0.75Ti_2.97V_0.03O₁₂ (BSTV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (P_r) and coercive field (E_c) of the BST ceramics are 18 μC/cm² and 70kV/cm, respectively. Furthermore, V substitution improves the P_r value of the BST ceramics up to 26 μC/cm². Therefore, co-sustitution of Sc and V in Bi₄Ti₃O₁₂(BIT) ceramic is effective for the improvement of its ferroelectricity.

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Key Engineering Materials (Volume 633)

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394-397

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https://doi.org/10.4028/www.scientific.net/KEM.633.394

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Online since:

November 2014

Authors:

X.B. Liu*, X.A. Mei, M. Chen, B. Li

Keywords:

Dielectric, Doping, Ferroelectric

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