Ferroelectric Properties of Bismuth Titanate Ceramics by Tm2O3/V2O5 Substitution

Bei Li; X.B. Liu; M. Chen; X.A. Mei

doi:10.4028/www.scientific.net/KEM.633.374

Paper Titles

Ballistic Performance of Laminated Composite with TiB₂ Based Ceramic to Ti-6Al-4V Alloy in Continuously-Graded Microstructure
p.357

Ferroelectric Properties of Bi_3.25Ho_0.75Ti_2.97V_0.03O₁₂
p.362

Electrical Characterization and Microstructures of Bi_4-xDy_xTi₃O₁₂ Ceramics
p.366

Electrical Characteristics and Microstructures of Pr₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.370

Ferroelectric Properties of Bismuth Titanate Ceramics by Tm₂O₃/V₂O₅ Substitution
p.374

Ferroelectric Properties and Microstructures of Bi_4-_xDy_xTi₃O₁₂ Thin Films
p.378

Ferroelectric Characteristics of Bi_4-xPr_xTi₃O₁₂ Ceramics
p.382

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb₂O₃/V₂O₅ Substitution
p.386

The Effect of La Substitution on the Ferroelectric Properties of Bi₄Ti₃O₁₂ Ceramics
p.390

HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Ferroelectric Properties of Bismuth Titanate...

Ferroelectric Properties of Bismuth Titanate Ceramics by Tm₂O₃/V₂O₅ Substitution

Abstract:

The ferroelectricity of Bi_3.25Tm_0.75Ti_2.97V_0.03O₁₂ (BTTV) ceramic prepared at 1200°C by a conventional ceramic technique was investigated. The ceramic possess random-oriented polycrystalline structure. The remanent polarization (P_r) and coercive field (E_c) of the BTTV ceramics are 25 μC/cm² and 70kV/cm, respectively. The P_r value of the BTTV ceramics up to 25 μC/cm² is larger than that of the BTT ceramics. Therefore, co-sustitution of Tm and V in Bi₄Ti₃O₁₂(BIT) ceramics is effective for the improvement of the ferroelectricity of Bi₄Ti₃O₁₂ ceramics.

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Key Engineering Materials (Volume 633)

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374-377

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https://doi.org/10.4028/www.scientific.net/KEM.633.374

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November 2014

Authors:

Bei Li, X.B. Liu, M. Chen, X.A. Mei

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Dielectric, Doping, Ferroelectric, Microstructure

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