Electrical Characterization and Microstructures of Bi4-xDyxTi3O12 Ceramics

Chong Qing Huang; X.A. Mei; M. Chen; B. Li

doi:10.4028/www.scientific.net/KEM.633.366

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Ferroelectric Properties of Bismuth Titanate Ceramics by Tm₂O₃/V₂O₅ Substitution
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Bi_4-xDy_xTi₃O₁₂ Ceramics

Abstract:

The electrical properties of Dy-doped bismuth titanate,Bi_4-xDy_xTi₃O₁₂ (BDT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r ) and coercive field (E_c) of the BDT ceramic with x=0.75 were above 16μC/cm² and 75KV/cm , respectively.

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Key Engineering Materials (Volume 633)

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366-369

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.633.366

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Online since:

November 2014

Authors:

Chong Qing Huang, X.A. Mei, M. Chen, B. Li

Keywords:

Bismuth Titanate, Doping, Ferroelectric, Film

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