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Paper Titles
Associates of Charged Defects in Gallium Arsenide: Calculation and Photoluminescence Data
p.101
Photoluminescence of Bismuth Doped GaSb
p.109
Optical Effects in Thin Layers
p.117
Magnetooptical Spectroscopy of Layer Dilute Magnetic Semiconductors
p.125
Visible Light Characterization of Sillicon on Insulator Materials
p.133
Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
p.141
The Origin of the M-Centre in Zinc Selenide
p.145
Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
p.151
Lattice Relaxation Effect on Bound Exciton in Ga1-XInXP:N
p.159

Visible Light Characterization of Sillicon on Insulator Materials

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Periodical:

Key Engineering Materials (Volume 65)

Pages:

133-140

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.65.133

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January 1992

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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